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Výskum | Research

Publikácie | Publications

Časopisy karentované | Current journals

  1. I. Jamnický, J. Ďurček, P. Bury: On the relaxation betwen ultrasonic and electric losses in amorphous Se. Acta Physica Slovaca 33 (1986), 122 - 129
  2. P. Koštial, I. Jamnický, J.Vančo: One posible test of the quality of electrophotographic layers. Czechoslovak Journal of Physics B 38 (1988), 672 - 676
  3. P. Bury, I. Jamnický, Ľ. Malinovský: Acoustic - DLTS investigation of GaAs MIS structures. Acta Physica Slovaca 43 (1993), 147 -152
  4. P. Bury, I. Jamnický: PC Operated Acoustic Transient Spectroscopy of Deep Levels in MIS Structures. Acta Physica Slovaca 46 (1996), 693 - 700
  5. J. Ďurček, I. Jamnický, P. Koštial, L. Štourač: Ultrasonic investigation of dynamic properties of dynamic properties of amorphous network. Journal of Non - Crystal Solids 90, (1987), 397 - 400
  6. P. Koštial, I. Jamnický, J. Ďurček: Contribution of the experimental methods of acoustic transient deep levels spectroscopy. Phys. Stat. Sol. (a) 116 (1989), K77 - K80
  7. P. Bury, I. Jamnický, J. Ďurček: Acoustic deep - level transient spectroscopy of MIS structures. Phys. Stat. Sol. (a) 126 (1991), 151 - 161
  8. I. Jamnický, P. Bury: Acoustic version of Lang's DLTS for MIS structure. Phys. Stat. Sol. (a) 139 (1993), K35 - K38
  9. P. Bury, I. Jamnický: Acoustic transient spectroscopy of deep levels in MIS structures using photo - excitation. Acustica 82 (1996), S240
  10. allP. Bury, I. Jamnický, V. W. Rampton: Acoustic spectroscopy of deep centers in GaAs/AlGaAs heterostructures. Physica B 263 - 264 (1999), 94 - 97.
    Abstract. Two Versions of the acoustic deep-level spectroscopy (A-DLTS) technique based on the acoustoelectric effect resulting from the interaction between an acoustic wave and heterostructures interfaces have been used to study deep centres in GaAs/AlGaAs heterostructures. The latter uses an acoustoelectric response signal (ARS) produced by the heterostructure interface when a longitudinal acoustic wave propagates through the heterostructure. Planar GaAs/AlGaAs heterostructure capacitors with electrodes in a field effect transistor configuration were investigated by these versions of the A-DLTS technique. Several deep centres were found and their activation energies and corresponding cross-sections determinated.
  11. allP. Bury, M. Jamnický, P. Hockicko, I. Jamnický:Transport Mechanismus Study of Glassy Electrolytes Using Acoustic Attenuation and Conductivity Spectroscopy, Glastech. Ber. Glass Sci. Technol. Vol. 77 C (2004) 354 - 358. ISSN 0946-7475
    Abstract. A particular attention is paid to the experimental study of transport mechanisms in glassy materials with the fast ion transport that play an important role in a number of modern electrochemical devices. The investigation of conductivity spectra of ionic glasses is the basic tool for transport mechanisms study. However, the acoustic attenuation measurement is another very useful technique for non-destructive investigation of transport mechanisms in conductive glasses that can have even some advantages comparing to electrical ones. In the contribution we present both acoustic and conductivity spectra of new phosphate glasses containing Cu+ conductive ions in the system CuI-CuBr-Cu2O-P2O5 with respect to investigate ion transport mechanisms and to determine the relation between acoustical and electrical properties considering the various glass compositions.

Časopisy ostatné | Others journals

  1. P. Bury, I. Jamnický, P. Hockicko: Acoustoelectric Investigation of Deep Centers in Bulk and Multilayered Semiconductors, Communications, Scientific Letters of the University of Žilina, 2/2003, 5-13.
  2. P. Bury, P. Hockicko, M. Jamnický, I. Jamnický: On the Relation between Electrical and Acoustical Properties of Ion Conductive Glasses, Adv. Electrical and Electronic Engineering, 2(2003), No. 3-4, 16 - 23
  3. allP. Bury, I. Jamnický, P. Hockicko: Acoustoelectric Investigation of Deep Centers in Bulk and Multilayered Semiconductors, Komunikácie / Communications - Vedecké listy Žilinskej Univerzity / Scientific letters of the University of Žilina 2/2003, EDIS Žilina, 5 - 13.
    Abstract. Two basic versions of the acoustic deep-level transient spectroscopy (A-DLTS) technique based on the acoustoelectric effect resulting from the interaction between an acoustic wave and interfaces have been used to study deep centres in semiconductor structures.